11 Y. -H. Zhang, J. -J. Li, S.H. Lim, Systems and methods for eliminating measurement artifacts of external quantum efficiency of multi-junction solar cells, US Patent 9,513,328, Dec. 6, 2016
Z. -Y. Lin, Y. -H.  Zhang, Real-time baseline correction technique for infrared time-resolved photoluminescence, US Patent App. 15/080,447, published Mar. 24, 2016
O. O. Cellek, Y.-H. Zhang, Multiband photodetector utilizing serially connected unipolar and bipolar devices, US Patent 9184194, Nov. 10, 2015.
8 Y.-H. Zhang, D. Ding, E. Steenbergen, Two-terminal multi-color photodetectors and focal plane arrays, US Patent 8350208, Jan. 8, 2013.
7 H. Jiang, H. Yu, C. Yu, K. O'brien, Y.-H. Zhang, OPTICAL DIFFRACTION GRATINGS AND METHODS FOR MANUFACTURING SAME, US Patent 20,120,212,820, published Aug. 23, 2012
6 Yong-Hang Zhang and Ding Ding, InP-Based Multi-Junction Photovoltaic and Optoelectronic Devices, US patent number: 20120073638, issued March 29, 2012
5 S. Johnson, P. Dowd, W. Braun. Y.-H. Zhang, C.Z. Guo, Long Wavelength Pseudomorphic InGaNPAsSb Type-I and Type-II Active Layers for the GaAs Material System, US 6,859,474, issued in February 22nd, 2005.
4 Y.-H. Zhang, Yu. G. Sadofyev, S. R. Johnson, Improved Performance of Electronic and Optoelectronic Devices Using a Surfactant During Epitaxial Growth, US provisional 60/417,988 filed October 2002, PCT/US2003/032179 published April 2004.
3 S. R. Johnson, Y.-H. Zhang, W. L. Johnson, A Method of Wafer Band-Edge Measurement Using Specular Reflection Spectroscopy and a Process for Controlling the Temperature Uniformity of a Wafer, US Patent 60239922, issued June 26, 2007.
2 Y.-H. Zhang and D. H. Chow, Silicon Selectively Doped InAs/AlAsSb Short-Period-Superlattices as N-Type Cladding Layers for MID IR Laser Structures Grown on InAs Substrates, US patent 5594750, issued in Jan. 1997.
1 W. Braun, P. Dowd, and Y.-H. Zhang, Compound semiconductor structures for optoelectronic devices, US patent 6566688, issued in May 2003.