2008
62 Suk Chung, Shane R. Johnson, Yong-Hang Zhang, David J. Smith, and Martha R. McCartney, “Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures”, J. Appl. Phys. accepted (2007).
61 S.-N. Wu, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang， Four-junction solar cells using monolithically integrated II-VI and III-V semiconductors, Applied Physics Letters, submitted.
60 X. Zhang, S. Wang, D. Ding, X. Liu, J.-H. Tan, J. K. Furdyna, Y.-H. Zhang and D. J. Smith， Structural characterization of II-VI and III-V materials for solar cell applications, J. of Electronic Materials, accepted
59 T. Tawara, H. Kamada, Y-H Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, and T. Sogawa, Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities, Optical Express, 16, 5199 (2008)
58 S. Horst, S. Chatterjee, K. Hantke,P. J. Klar, I. Nemeth,W. Stolz,K. Volz,C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle,S. R. Johnson, J.-B. Wang,and Y.-H. Zhang, Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures, Appl. Phys. Lett., 92, 161101 (2008)
57 S. Wang, D. Ding, X. Liu, X.-B. Zhang, D. J. Smith, J. K. Furdyna, and Y.-H. Zhang, MBE growth of II/VI materials on GaSb substrates for photovoltaic applications, J. of Cryst. Growth, in press.
56 S.-Q. Yu, Y. Cao, S. R. Johnson, and Y.-H. Zhang, Y.-Z. Huang, GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers, J. of Vac. Sci. & Tech. B, 26, 56 (2008).
55 T. Tawara, H. Kamada, Y-H Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, and T. Sogawa, Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities, Optical Express, 16, 5199 (2008)
54 S. Horst, S. Chatterjee, K. Hantke,P. J. Klar, I. Nemeth,W. Stolz,K. Volz,C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle,S. R. Johnson, J.-B. Wang,and Y.-H. Zhang, Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures, Appl. Phys. Lett., 92, 161101 (2008)
 
2007
53 S.-Q. Yu, D. Ding, J.-B Wang, N. Samal, X. Jin, Y. Cao Y, S. R. Johnson SR, Y.-H. Zhang, High performance GaAsSb/GaAs quantum well lasers, J. of Vac. Sci. & Tech. B, 25, 1658 (2007)
52 K. Hild, S. J. Sweeney, I. P. Marko, S. R. Jin, S. R. Johnson, S. A. Chaparro, S. Yu, Y.-H. Zhang, Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers, physica status solidi (b), 244, 197 (2007).
51 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Excitation Dependent Photoluminescence Measurements of Nonradiative Lifetime and Quantum Efficiency in Bulk GaAs/AlGaAs, J. Vac. Sci. Technol. B, (accepted).
50 J.-B. Wang, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy, physica status solidi (b), 244, 2740 (2007).
49 D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Intrinsic Irreversibility in Semiconductor Light Emission, Phys. Stat. Sol. (c)4, No.5, 1698 (2007).
48 J.-B. Wang, and Y.-H. Zhang, Increased power conversion efficiency through photon recycling in quantum well lasers, physica status solidi (c)4, No.5, 1601 (2007).
 
2006
47 K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, S. R. Johnson, S. A. Chaparro, S.-Q. Yu, Y.-H. Zhang, Carrier recombination in 1.3 µm GaAsSb/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).
46 L. Borkovska, O. Yefanov, O. Gudymenko, S. R. Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu. G. Sadofyev, Y.-H. Zhang, Effect of Growth Temperature on the Luminescent and Structural Properties of InGaAsSbN/GaAs Quantum Wells for 1.3 μm Telecom Applications, Thin Solid Films 515, 786 (2006).
45 N. A. Kabir, Y. Yoon, J. R. Knab, J.-Y. Chen, A. G. Markelz, J. L. Reno, Yu. G. Sadofyev, S. R. Johnson, Y.-H. Zhang, J. P. Bird, Terahertz Transmission Characteristics of High-Mobility GaAs and InAs Two-Dimensional-Electron-Gas Systems, Appl. Phys. Lett. 89, 132109 (2006).
44 J.-B.Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Influence of photon recycling on semiconductor luminescence refrigeration , J. Appl. Phys., 100, 043502 (2006) download
43 S.-Q. Yu, X. Jin, S. R. Johnson, Y.-H. Zhang, Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers, J. Vac. Sci. Technol. B 24, 1617 (2006) download
 
2005
42 N. Samal, S. R. Johnson, D. Ding, A. K. Samal, S.-Q. Yu, Y.-H. Zhang, High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers, Appl. Phys. Lett. 87, 161108 (2005).
41 G. Blume, T. J. C. Hosea, S. J. Sweeney, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, Spectroscopic Investigations of GaAsSb/GaAs based structures for 1.3 µm VCSEL applications, IEE Proc. Optoelectron. 152, 110 (2005).
40 Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Infrared Light Induced Beating of Shubnikov-de Haas Oscillations in MBE grown InAs/AlSb Quantum Wells, J. Crystal Growth 278, 661 (2005).
39 Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Unusual Persistent Photoconductivity in InAs/AlSb Quantum Wells, Semiconductors 39, 95 (2005), [Fiz. Tekh. Poluprovodn. 39, 106 (2005)].
38 V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Cyclotrone Resonance in Both Doped and Non-Doped InAs/AlSb Quantum Well Heterostructures, Semiconductors 39, 61 (2005), [Fiz. Tekh. Poluprovodn. 39, 71 (2005)].
37 V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Maremiyanin, S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, Y.-H. Zhang, Persistent Photoconductivity Spectra in InAs/AlSb Quantum Well Heterostructures, Semiconductors 39, 22 (2005), [Fiz. Tekh. Poluprovodn. 39, 30 (2005)].
 
2004
36 J.-B. Wang, S. R. Johnson, S. A. Chaparro, D. Ding, Y. Cao, Yu. G. Sadofyev, Y.-H. Zhang, Band Edge Alignment of Pseudomorphic GaAs1-ySby on GaAs, Phys. Rev. B 70, 195339 (2004).
35 D. S. Jiang, L. F. Bian, X. G. Liang, K. Chang, B. Q. Sun, S. R. Johnson, Y.-H. Zhang, Structural and Optical Properties of GaAsSb/GaAs Heterostructure Quantum Wells, J. Crystal Growth 268, 336 (2004).
34 S. R. Johnson, Yu. G. Sadofyev, D. Ding, Y. Cao, S. A. Chaparro, K. Franzreb, Y.-H. Zhang, Sb-Mediated Growth of n and p Type AlGaAs by Molecular Beam Epitaxy, J. Vac. Sci. Technol. B 22, 1436 (2004).
33 Yu. G. Sadofyev, S. R. Johnson, S. A. Chaparro, Y. Cao, D. Ding, J.-B. Wang, K. Franzreb, Y.-H. Zhang, Sb-Mediated Growth of Si Doped AlGaAs by Molecular Beam Epitaxy, Appl. Phys. Lett. 84, 3546 (2004).
 
2003 and earlier
32 J. Siegert, S. Marcinkevicius, A. Gaarder, R. Leon, S. A. Chaparro, S. R. Johnson, Yu. G. Sadofyev, Y.-H. Zhang, Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers, Phys. Stat. Sol. (c) 0, 1213 (2003).
31 X. H. Zheng, D. S. Jiang, S. R. Johnson, Y.-H. Zhang, Structural and Optical Properties of Strain-Compensated GaAsSb/GaAs Quantum Wells with High Sb Composition, Appl. Phys. Lett. 83, 4149 (2003).
30 P. Dowd, S.R. Johnson, S.A. Feld, M. Adamcyk, S.A. Chaparro, J. Joseph, K. Hilgers, M.P. Horning, K. Shiralagi, Y.-H. Zhang, “Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications,” Electron. Lett. Vol. 39, pp. 987-988, 2003.
29 S. R. Johnson, C.-Z. Guo, S. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, X. Jin, S.-Q. Yu, D. Ding, Y.-H. Zhang, GaAsSb/GaAs Band Alignment Evaluation for Long-Wave Photonic Applications, J. Crystal Growth 251, 521 (2003).
28 Yu. G. Sadofyev, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Large g-Factor Enhancement in High-Mobility InAs/AlSb Quantum Wells, Appl. Phys. Lett. 81, 1833 (2002).
27 R. Leon, J. Ibanez, S. Marcinkevicius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, S. R. Johnson, Y.-H. Zhang, Defect States in Red-Emitting InxAl1-xAs Quantum Dots, Phys. Rev. B 66, 85331 (2002).
26 V. Pacradouni, W. J. Mandeville, A. R. Cowan, J. F. Young, S. R. Johnson, Dispersion and Lifetimes of Electromagnetic Modes Attached to Strongly Textured Slab Waveguides, Optical and Quantum Electronics 34, 161 (2002).
25 R. Leon, S. Chaparro, S. R. Johnson, C. Navarro, X. Jin, Y.-H. Zhang, J. Siegert, S. Marcinkevicius, X. Z. Liao, J. Zou, Dislocation-Induced Spatial Ordering of InAs Quantum Dots: Effects on Optical Properties, J. Appl. Phys. 91, 5826 (2002).
24 M. Canonico, C. Poweleit, J. Menéndez, A. Debernardi, S. R. Johnson, Y.-H. Zhang, Anomalous LO Phonon Lifetime in AlAs, Phys. Rev. Lett. 88, 215502 (2002).
23 S. R. Johnson, S. Chaparro, J. Wang, N. Samal, Y. Cao, Z. B. Chen, C. Navarro, J. Xu, S. Q. Yu, David J. Smith, C.-Z. Guo, P. Dowd, W. Braun, and Y.-H. Zhang, GaAs-substrate-based long-wave active materials with type-II band alignments, J. Vac. Sci. & Technol., 19(4), 1501 (2001).
22 J. Ibáñez, R. Leon, D. T. Vu, S. Chaparro, S. R. Johnson, C. Navarro, and Y. H. Zhang, Tunneling carrier escape from InAs self-assembled quantum dots, Appl. Phys. Lett. 79(13), 2013 (2001).
21 R. Leon, G. M. Swift, B. Magness, W.A. Taylor, Y.S. Tang, K.L. Wang, P. Dowd, and Y.-H. Zhang, Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots, Appl. Phys. Lett. 76(15), 2075 (2000).
20 V. Pacradouni, W. J. Mandeville, A. R. Cowan, P. Paddon, J. F. Young, S. R. Johnson, Photonic Band Structure of Dielectric Membranes Periodically Textured in Two Dimensions, Phys. Rev. B 62, 4204 (2000).
19 W. Braun, P. Dowd, C.-Z. Guo, S. L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsasser, D. J. Smith, Strained InGaAs/GaPAsSb Heterostructures Grown on GaAs (001) for Optoelectronic Applications in the 1100 nm – 1550 nm Range, J. Appl. Phys. 88, 3004 (2000).
16 P. Dowd, W. Braun, David J. Smith, C.M. Ryu, C.-Z. Guo, S.L. Chen, U. Koelle, S.R. Johnson, and Y.-H. Zhang, Long Wavelength (1.3 µm and 1.5 µm) Photoluminescence from InGaAs/GaPAsSb Quantum Wells Grown on GaAs, Appl. Phys. Lett. 75(9), 1267 (1999).
15 W. Braun, H. Möller and Y.-H. Zhang, Accurate Growth Rate Determined on Rotating Substrates Using Electron Diffraction Dynamics, Appl. Phys. Lett., 74(1) 140 (1999).
14 W. Braun, H. Möller, S.R. Johnson, and Y.-H. Zhang, Reflection high-energy electron diffraction oscillations on rotating substrates, J. Vac. Sci. & Technol. 17, 474 (1999).
13 S. R. Johnson, E. Grassi, M. Beaudoin, M. D. Boonzaayer, K. S. Tsakalis, and Y.-H. Zhang, Closed-Loop Control of Composition and Temperature During the Growth of Lattice-Matched InGaAs on InP, J. Vac. Sci. Technol. B 17, 1237 (1999).
12 M. Beaudoin, S.R. Johnson, M.D. Boonzaayer, Y.-H. Zhang, and B. Joe, Use of Spectroscopic Ellipsometry for Feedback Control during the Growth of Thin AlAs and InAs layers, J. Vac. Sci. & Technol., B 17, 1233-6. (1999).
11 W. Braun, H. Möller, and Y.-H. Zhang, Azimuthal Scans: a New RHEED Measurement Mode During Growth on Rotating Substrates, J. Crystal Growth, 201/202, 50 (1999).
10 M. Beaudoin, P. Kelkar, S. R. Johnson, C.-H. Kuo, M. Boonzaayer, and Y.-H. Zhang, Growth of Resonant Cavity Enhanced Photo-Detectors (RCEPD) by MBE with Feedback Control Using Spectroscopic Ellipsometry, J. Crystal Growth, 201/202, 990 (1999).
9 S.R. Johnson, G. Grassi, M. Beaudoin, M. Boonzaayer, K.S. Tsakalis, Y.-H. Zhang, Feedback Control of Substrate Temperature During the Growth of Near-Lattice-Matched InGaAs and InAlAs on InP Using Diffuse Reflection Spectroscopy, J. Crystal Growth, 201/202, 44 (1999).
8 C.-H. Kuo, M. DeHerrera, T. Kyong, M. Boonzaayer, Y.-H. Zhang, B. Johs, and J.S. Hale, Real Time In-Situ Control of InGaAs Lattice Matched to InP by 88 Wavelength Ellipsometer, J. Vac. Sci. & Technol., B 16, 1484 (1998).
7 S.R. Johnson, C.-H. Kuo, M. Boonzaayer, W. Braun, U. Koelle, and Y.-H. Zhang, In-situ Temperature Control during MBE Growth Using band Edge Thermometry, J. Vac. Sci. & Technol., B 16, 1502 (1998).
6 W. Braun, H. Möller, and Y.-H. Zhang, Reflection High-Energy Electron Diffraction during Substrate Rotation: a New Dimension for in-situ Characterization, J. Vac. Sci. & Technol., B 16, 1507 (1998).
5 C.B. Wheeler and Y.-H. Zhang, III-V Oxides, and their Uses in Optoelectronic Integration, Compound Semicond. 3, 40 (1997).
4 Y.-H. Zhang, A. Y. Lew, E. T. Yu, and Y. Chen, Microstructure Properties of InAs/InAsxSb1-x Superlattices Grown by Molecular Beam Epitaxy, J. of Crystal Growth 175, 833 (1997).
3 K. Meimberg, M. Potemski, P. Hawrylak, Y.-H. Zhang, and K. Ploog, Optical Detected Oscillations of Screening by a Two-Dimensional Electron Gas in a Magnetic Field, Phys. Rev. B55, 7685 (1997).
2 H.Q. Le, G.W. Turner, J.R. Ochoa, M.J. Manfra, C.C. Cook, and Y.-H. Zhang, Broad Wavelength Tunability of Grating-Coupled External Cavity Midinfrared Semiconductor Lasers, Appl. Phys. Lett. 69, 2804 (1996).
1 A.Y. Lew, E.T. Yu, and Y.-H. Zhang, Atomic-Scale Structure of InAs/InAsxSb1-x Superlattices Grown and InAsxSb1-x Ordered Alloys Grown by Modulated Molecular Beam Epitaxy, J. of Vac. Sci. & Technol. B14, 2940 (1996).