See our digital archive here for access to papers published in select journals.


2017
148 B.D. Tracy, D.J. Smith, M.B. Lassise, Y.-H. Zhang, Heterovalent ZnTe/GaSb and ZnSe/GaAs Grown by Molecular Beam Epitaxy, Microscopy and Microanalysis 23 (S1), 1472-1473
147
J.J. Becker, M. Boccard, C.M. Campbell, Y. Zhao, M. Lassise, Z. Holman, Y.-H.Zhang, Loss Analysis of Monocrystalline CdTe Solar Cells With 20% Active-Area Efficiency, IEEE Journal of Photovoltaics, 1-6
146
X.-H. Zhao, S. Liu, C.M. Campbell, Y. Zhao, M.B. Lassise, Y.-H. Zhang, Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/Mgx Cd1-xTe Heterointerface, IEEE Journal of Photovoltaics, 1-6
145
Y. Zhao, X.-H. Zhao, Y.-H. Zhang, Radiative Recombination Dominated Monocrystalline CdTe/MgCdTe Double-Heterostructures, IEEE Journal of Photovoltaics 7 (2), 690-694
144 D.J. Smith, J. Lu, T. Aoki, M.R. McCartney, Y.-H. Zhang, Observation of compound semiconductors and heterovalent interfaces using aberration-corrected scanning transmission electron microscopy, Journal of Materials Research 32 (5), 921-927
143
 J.J. Becker, C.M. Campbell, Y. Zhao, M. Boccard, D. Mohanty, M.B. Lassise, E. Suarez, i. Bhat, Z. Holman, Y.-H. Zhang, Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts, IEEE Journal of Photovoltaics 7 (1), 307-312

2016
142 Z.-Y. He, C.M. Campbell, M.B. Lassise, Z.-Y Lin, J.J. Becker, Y. Zhao, M. Boccard, Z. Holman, Y.-H Zhang, CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates, Appl. Phys. Letters 109, 121112 (2016)         
141 Y. Zhao, M. Boccard, S. Liu, J. Becker, X.-H. Zhao, C. M. Campbell, E. Suarez, M. B. Lassise, Z. Holman, and Y.-H. Zhang, Monocrystalline CdTe Solar Cells with Open-Circuit Voltage Over 1V and Efficiency of 17%, Nature Energy (2016).
140 J. Lu, M. J. DiNezza, X.-H. Zhao, S. Liu, Y.-H. Zhang, A. Kovacs, R. E. Dunin-Borkowski, and D. J. Smith, Towards Defect-Free Epitaxial CdTe and MgCdTe Layers Grown on InSb (001) Substrates, Journal of Crystal Growth (2016).
139 J. Lu, E. Luna, T. Aoki, E. H. Steenbergen, Y.-H. Zhang, and D. J. Smith, Evalutation of Antimony Segregation in InAs/InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy, J. of Appl. Phys. 119, 095702 (2016).
138 X.-H. Zhao, S. Liu, Y. Zhao, C. M. Campbell, M. B. Lassise, Y.-S. Kuo, and Y.-H. Zhang, Electrical and Optical Properties of n-Type Indium-Doped CdTe/MgCdTe Double Heterostructures, IEEE Journal of Photovoltaics (2016).
137 H. Fu, Z. Lu, X.-H, Zhao, Y.-H. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, Study of Low Efficiency Droop in Semipolar (20-2-1) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence, Journal of Display Technology (2016).

2015
136 P. T. Webster, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, Y.-H. Zhang, and S, R, Johnson, Measurement of InAsSb Bandgap Energy and InAs/InAsSb Band Edge Positions Using Spectroscopic Ellipsometry and Photoluminescence Spectroscopy, J. Appl. Phys. 118, 245706 (2015).
135 Z. Gan, M. DiNezza, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination, Microscopy and Microanalysis (2015).
134 Z.-Y. Lin, S. Liu, E. H. Steenbergen, Y.-H. Zhang, Influence of Carrier Localization on Minority Carrier Lifetime in InAs/InAsSb Type-II Superlattices, Appl. Phys. Letters 107, 201107 (2015).
133 X.-M. Shen, Z.-Y, He, S. Liu, Y.-H. Zhang, D. J. Smith, M. McCartney, Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography, Bulletin of the American Physical Society (2015).
132 E. Suarez, X.-H. Zhao, Y. Zhao, C. M. Campbell, M. B. Lassise, P. Webster. S. Liu, Y.-S. Kuo, and Y.-H. Zhang, ZnTe:P/CdTe Superlattice Window for CdTe Solar Cell on InSb Substrates, Bulletin of the American Physical Society (2015).
131 X. Wang, C. M. Campbell, Y.-H. Zhang, and R. Nemanich, Band Alignment of Hydrogen-Plasma Cleaned MBE CdTe on InSb (001), Bulletin of the American Physical Society (2015).
130 X.-M. Shen, Z.-Y. He, S. Liu, Z.-Y. Lin, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, An Indirect Method of Studying Band Alignments in nBn Photodetectors Usig Off-Axis Electron Holography, Appl. Phys. Letters 107, 122109 (2015).
129 S. Liu, X.-H. Zhao, C. M. Campbell, M. B. Lassise, Y. Zhao, and Y.-H. Zhang, Carrier Lifetimes and Interface Recombination Velocities in CdTe/MgCd1-xTe Double Heterostructures with Different Mg Compositions Grown by Molecular Beam Epitaxy, Appl. Phys. Letters 107, 041120 (2015).
128 J. Suh, K. M. Yu, D. Fu, X. Liu, F. Yang, J. Fan, D. J. Smith, Y.-H. Zhang, J. K. Furdyna, C. Dames, W. Walukiewicz, and J. Wu, Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects, Adv. Materials (2015).
127 S. Liu, W. Yang, J. Becker, Y.-S. Kuo, Y.-H. Zhang, Non-Lambertian Reflective Back Scattering and Its Impact on Device Performance of Ultrathin GaAs Single-Junction Solar Cells, IEEE J. of Photovoltaics (2015).
126 S. Seyedmohammadi, M. J. Dinezza, S. Liu, P. King, E. G. LeBlanc, X.-H. Zhao, C. M. Campbell, T. H. Meyers, Y.-H. Zhang, and R. J. Malik, Molecular Beam Epitaxial re-growth of CdTe, CdTe/CdZnTe double heterostructures on CdTe/InSb (100) substrates with As cap, J. of Crys. Growth (2015).
125 D. Zuo, R. Liu, D. Wasserman, J. Mabon, Z.-Y. He, S. Liu, Y.-H. Zhang, E. A. Kadlec, B. V. Olson, and E. A. Shaner, Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors, Appl. Phys. Letters 106, 071107 (2015).
124 J. Lu, P. T. Webster, S. Liu, Y.-H. Zhang, S. R. Johnson, and D. J. Smith, Investigation of MBE-grown InAs 1-x Bi x Alloys and Bi-mediated Type-II Superlattices by Transmission Electron Microscopy, J. of Crys. Growth (2015).
123 P. T. Webster, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, Y.-H. Zhang, and S. R. Johnson, Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry, Appl. Phys. Letters 106, 061907 (2015).
122 S. Liu, X.-H. Zhao, C. M. Campbell, M. J. DiNezza, Y. Zhao, Y.-H. Zhang, Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy, J. Vac. Sci. Technol. B 33, 011207 (2015).

2014

121 X.-H. Zhao, M. J. DiNezza, S. Liu, C. M. Campbell, Y. Zhao, and Y.-H. Zhang, Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy, Appl. Phys. Letters 105, 252101 (2014).
120 B. Fluegel, K. Alberi, M. J. DiNezza, S. Liu, Y.-H. Zhang, and A. Mascarenhas, Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as Seen via Microphotoluminescence, Phys. Review Appl. 2, 034010 (2014).
119 Xin-Hao Zhao, Michael J. DiNezza, Shi Liu, Su Lin, Yuan Zhao, and Yong-Hang Zhang, Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy, Journal of Vacuum Science & Technology B 32, 040601 (2014).
118 K. Alberi, B. Fluegel, M. J. DiNezza, S. Liu, Y.-H. Zhang, and A. Mascarenhas, Probing carrier lifetimes at dislocations in epitaxial CdTe, Appl. Phys. Express 7, 065503 (2014).
117 P. T. Webster, N. A. Riordan, C. Gogineni, S. Liu, J. Lu, X.-H. Zhao, D. J. Smith, Y.-H. Zhang, and S. R. Johnson, Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices, J. Vac. Sci. Technol. B 32, 02C120 (2014).
116 W. Yang, J. Becker, Y.-S. Kuo, J.-J. Li, S. Liu, B. Landini, K. Campman, and Y.-H. Zhang, Ultra-Thin GaAs Single-Junction Solar Cells Integrated with a Reflective Back Scattering Layer, J. Appl. Phys. 115, 203105 (2014).

 
2013

115 Smith, D.J., Aoki, T., Furdyna, J.K., Liu, X., McCartney, M.R., and Zhang, Y.-H., “Atomic-scale characterization of (mostly zincblende) compound semiconductor heterostructures”, J. Phys: Conf. Ser. 471, 012005 (2013).
114 M. J. DiNezza, X.-H. Zhao, S. Liu, A. P. Kirk and Y.-H. Zhang, “Growth, steady-state and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy,” Applied Physics Letters 103, 193901 (2013).
113 K. Mahalingam, E. H. Steenbergen, G. J. Brown, Y.-H. Zhang, Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices, Appl. Phys. Lett. 103, 061908 (2013).
112 X.-M. Shen, H. Li, S. Liu, D. J. Smith, Y.-H. Zhang, Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy, J. of Cryst. Growth 381, 1-5 (2013).
111 J.-J. Li, C. R. Allen, S. H. Lim, and Y.-H. Zhang, Elimination of artifacts in external quantum efficiency measurements of multijunction solar cells using a pulsed voltage bias, IEEE J. of Photovoltaics 3, 769 – 775 (2013).
110 J. Fan, X. Liu, L. Ouyang, R. E. Pimpinella, M. Dobrowolska, J. K. Furdyna, D. J. Smith, and Y.-H. Zhang, Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors, J. Vac. Sci. Technol. B 31, 03C109 (2013).
109 J. Fan, L. Ouyang, X. Liu, J. K. Furdyna, D. J. Smith, and Y.-H. Zhang, GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy Journal of Crystal Growth, J. of Crystal Growth 371 (1), 122–125 (2013).
108 S. Liu, H. Li, O. O. Cellek, D. Ding, X.-M. Shen, E. H. Steenbergen, Z.-Y. Lin, J. Fan, Z.-Y. He, J. Lu, S. R. Johnson, D. J. Smith, and Y.-H. Zhang, Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy, Appl. Phys. Lett. 102, 071903-071903-4 (2013).
107 N. Hossain, K. Hild, S.R. Jin, S.-Q. Yu, S.R. Johnson, D. Ding, Y.-H. Zhang, S.J. Sweeney, the influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers, Appl. Phys. Lett. 102, 041106-041106-4 (2013).
106 H. Li, S. Liu, O. O. Cellek, D. Ding, X.-M. Shen, E. H. Steenbergen, J. Fan, Z. Lin, Z.-Y. He, Q. Zhang, P. T. Webster, S. R. Johnson, L. Ouyang, D.J. Smith, and Y.-H. Zhang, A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy, J. of Crystal Growth 378, 145-149 (2013).
105 J.-J. Li and Y.-H. Zhang, Elimination of Artifacts in External Quantum Efficiency Measurements for Multijunction Solar Cells Using a Pulsed Light Bias, IEEE J. of Photovoltaics 3, 364-369 (2013).

 
2012

104 H.S. Kim, O.O. Cellek, Z. Lin, Z.-Y. He, H. Li, S. Liu, and Y.-H. Zhang. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices, Applied Physics Letters 101, 161114 (2012).
103 J. Fan, X. Liu, J. K. Furdyna, Y.-H. Zhang, ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications, Applied Physics Letters 101 (12), 121909 (2012).
102 J.-J. Li, L. Yin, S. R Johnson, B.J. Skromme, S. Wang, X. Liu, D. Ding, C.-Z. Ning, J. K. Furdyna, Y.-H. Zhang, Photoluminescence studies of type-II CdSe/CdTe superlattices, Applied Physics Letters 101, 061915-061915. (2012)
101 G. Blume, K. Hild, I.P. Marko, T.J.C. Hosea, S.-Q. Yu, S.A. Chaparro, N. Samal, S.R. Johnson, Y.-H. Zhang, S.J. Sweeney, Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements, Journal of Applied Physics 112, 033108-033108. (2012)
100 O.O. Cellek, J.L. Reno, Y.-H. Zhang, Optically addressed near and long-wave infrared multiband photodetectors, Applied Physics Letters 100, 241103-241103. (2012)
99 J.-J. Li, X. Liu, S. Liu, S. Wang, D. J. Smith, D. Ding, S.R. Johnson, J. K. Furdyna and Y.-H. Zhang, CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy, Appl. Phys. Lett. 100, 121908 (2012).
98 N. A. Riordan, C. Gogineni, S. R. Johnson, X. Lu, T. Tiedje, D. Ding, Y.-H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, S. W. Koch, Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs, Journal of Materials Science: Materials in Electronics, DOI: 10.1007/s10854-012-0665-1. (2012)
97 X. Liu, D. J. Smith, H. Cao, Y. P. Chen, J. Fan, Y.-H. Zhang, R. E. Pimpinella, M. Dobrowolska, and J. K. Furdyna, Characterizations of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (100) GaAs substrates, J. Vac. Sci. Technol. B 30, 02B103 (2012);
96 M. J. DiNezza, Q. Zhang, D. Ding, J. Fan, X. Liu, J. K. Furdyna, Y.-H. Zhang, Aluminum diffusion in ZnTe films grown on GaSb substrates for n-type doping, physica status solidi (c), 9, 1720–1723 (2012).
95 Q. Zhang, X. Liu, M. J. DiNezza, J. Fan, D. Ding, J. K. Furdyna, Y.-H. Zhang, Influence of Te/Zn flux ratio on Aluminum doped ZnTe grown by MBE on GaSb substrates, physica status solidi (c), 9, 1724–1727 (2012).
94 E. H. Steenbergen, K. Nunna, L. Ouyang, B. Ullrich, D. L. Huffaker, Y.-H. Zhang, Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates, J. Vac. Sci. Technol. B 30, 02B107 (2012);
93 L. Ouyang, E. H. Steenbergen, Y.-H. Zhang, K. Nunna, D. L. Huffaker, and D. J. Smith, Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy, J. Vac. Sci. Technol. B 30, 02B106 (2012);
92 J. Fan, L. Ouyang, X. Liu, D. Ding, J. K. Furdyna, D. J. Smith, and Y.-H. Zhang, Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy, J. Vac. Sci. Technol. B, 30, 02B122 (2012).

 
2011
91 D. Ding, S. R. Johnson, S.-Q. Yu, S.-N. Wu, and Y.-H. Zhang, A Semi-Analytical Model for Semiconductor Solar Cells, J. Appl. Phys. 110, 123104 (2011).
90 E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, and Y.-H. Zhang, Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb, Appl. Phys. Lett. 99, 251110 (2011).
89 J.-J. Li, S. H. Lim, C. R. Allen, D. Ding and Y.-H. Zhang, Combined effects of shunt and luminescence coupling on external quantum efficiency measurements of multi-junction solar cells, IEEE J. of Photovoltaics 1, 225-230 (2011).
88 X. Liu, D. J. Smith, J. Fan, Y.-H. Zhang, H. Cao, Y. P. Chen, J. Leiner, B. J. Kirby, M. Dobrowolska, and J. K. Furdyna, Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(100) substrates, Appl. Phys. Lett. 99, 171903 (2011).
87 E. H. Steenbergen, Y. Huang, J.-H. Ryou, L. Ouyang, J.-J. Li, D. J. Smith, R. D. Dupuis, Y.-H. Zhang, Structural and optical characterization of type-II InAs/InAs1-xSbx superlattices grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 99, 071111 – 071114 (2011).
86 K. Hild, I.P. Marko, S. J. Sweeney, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang, Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3µm GaAsSb/GaAs Vertical Cavity Surface Emitting Lasers, Appl. Phys. Lett. 99, 071110 - 0711102 (2011).

85 S. H. Lim, J.-J. Li, E. H. Steenbergen, Y.-H. Zhang, Luminescence coupling effects on multi-junction solar cell external quantum efficiency measurement, Progress in Photovoltaics: Research and Applications, published online: 30 NOV 2011 | DOI: 10.1002/pip.1215 (2011).
84 L. Ouyang, J. Fan, S. Wang, X. Lu, Y.-H. Zhang, X. Liu, J. K. Furdyna, and D. J. Smith, Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (100) substrates, J. of Cryst. Growth 330, 30–34 (2011).
83
R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, Y.-H. Zhang, Effects of Ar vs. O2 Ambient on Pulsed-Laser-Deposited Ga-doped ZnO, J. of Cryst. Growth 324, 110-114 (2011).
82 S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang, Ultra High Luminescence Extraction via the Monolithic Integration of a Light Emitting Active Region with a Semiconductor Hemisphere, J. Vac. Sci. Technol. B29, 031213- 031219 (2011).
81 E. H. Steenbergen, M. J. DiNezza, W. H. G. Dettlaff, S. H. Lim, Y.-H. Zhang, Effects of varying light bias on an optically-addressed two-terminal multi-color photodetector, Infrared Physics and Technology 54, 292-295 (2011).
80 Y. Huang, J.-H. Ryou, R. D. Dupuis, V. R. D’Costa, E. H. Steenbergen, J. Fan, Y.-H. Zhang, A. Petschke, M. Mandl, S.-L. Chuang, Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors, J. of Cryst. Growth 314, 92-96 (2011).
79 R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, D .J. Smith, D. Ding, X. Lu, Y.-H. Zhang, Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition, J. Electron. Mater. 40, 419-428 (2011).


2010

78 J. Fan, L. Ouyang, X. Liu, D. Ding, J.K. Furdyna, D. J. Smith and Y.-H. Zhang, Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications, J. of Cryst. Growth 323, 127-131 (2010).
77 E. H. Steenbergen, M. J. DiNezza, W. H. G. Dettlaff, S. H. Lim, Y.-H. Zhang, Optically-addressed two-terminal multi-color photodetector, Appl. Phys. Lett. 97 161111-161114 (2010).
76 S.-N. Wu, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Four-junction solar cells using monolithically integrated II-VI and III-V semiconductors, Progress in Photovoltaics: Research and Applications 18, 328–333 (2010).
75 R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, Y.-H. Zhang, Highly conductive ZnO grown by pulsed laser deposition in pure Ar, Appl. Phys. Lett. 97 072113-072116 (2010).
74 C. Yu, K. O'Brien, Y.-H. Zhang, H. Yu, and H. Jiang, Tunable Optical Gratings Based on Buckled Nano-Scale Thin Films on Transparent Elastomeric Substrates, Appl. Phys. Lett. 96, 041111-041114 (2010).
73 S. Chung, S. R. Johnson, D. Ding, Y.-H. Zhang, D. J. Smith, M. R. McCartney, Quantitative Dopant Profiling of p-n Junction in InGaAs/AlGaAs Light-Emitting Diode using Off-Axis Electron Holography, J. Vac. Sci. Technol. B 28, C1D11-14 (2010).
 
2009
72 S. Chung, S. R. Johnson, D. Ding, Y.-H. Zhang, D. J. Smith, M. R. McCartney, Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography, IEEE Transactions on Electron Devices 56, 1919-1923 (2009).
71 X. Zhang, S. Wang, D. Ding, X. Liu, J.-H. Tan, J. K. Furdyna, Y.-H. Zhang, and D. J. Smith, Structural characterization of integrated II-VI and III-V heterostructures for solar cell applications, J. of Electronic Materials, 8, 1558 (2009).
70 S. Wang, D. Ding, X. Liu, X.-B. Zhang, D. J. Smith, J. K. Furdyna, and Y.-H. Zhang, MBE growth of II/VI materials on GaSb substrates for photovoltaic applications, J. of Cryst. Growth 311, 2116-2119 (2009).
69 S. Chung, S. R. Johnson, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures, J. Appl. Phys. 105, 014910 (2009).
 
2008
68 S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands, physica status solidi (c) 6, 411-414 (2008).
67 S.-Q. Yu, Y. Cao, S. R. Johnson, Y.-H. Zhang, Y.-Z. Huang, GaSb Based Midinfrared Equilateral-Triangle-Resonator Semiconductor Lasers, J. Vac. Sci. Technol. B26, 56-61 (2008). 
66 T. Tawara, H. Kamada, Y.-H. Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, and T. Sogawa, Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities, Optical Express 16, 5199 (2008)
65 S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, S. R. Johnson, J.-B. Wang, and Y.-H. Zhang, Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures, Appl. Phys. Lett. 92, 161101-161103 (2008).
 
2007
64 Y. Wang; H.S. Djie; B.S. Ooi; P. Rotella; P. Dowd; V. Aimez; Y. Cao; Y.-H. Zhang, Interdiffusion effect on quantum-well structures grown on GaSb substrate, Thin Solid Films 515(10),4352-4355 (2007).
63 C. Lange, M. Schwalm, S. Chatterjee, W. W. Rühle, N. C. Gerhardt, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, The Variable Stripe-Length Method Revisited: Improved Analysis, Appl. Phys. Lett. 91, 191107, 1-3 (2007). 
62 S.-Q. Yu, D. Ding, J.-B. Wang, N. Samal, X. Jin, Y. Cao, S. R. Johnson, Y.-H. Zhang, High Performance GaAsSb/GaAs Quantum Well Lasers, J. Vac. Sci. Technol. B 25, 1658-63 (2007). 
61 L. Borkovska, N. Korsunska, V. Kladko, T. Kryshtab, V. Kushirenko, M. Slobodyan, O. Yefanov, Ye. Venger, S. R. Johnson, Yu. G. Sadofyev, Y.-H. Zhang, Investigation of Defect Structure of InGaNAsSb/GaAs Quantum Wells, Materials Science & Engineering C 27, 1038-42 (2007). 
60 S.-Q. Yu, J.-B. Wang, D. Ding, S. R. Johnson, D. Vasileska, Y.-H. Zhang, Impact of electronic density of states on electroluminescence refrigeration, Solid-State Electronics 51, 1387–1390 (2007)
59 J.-B. Wang, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy, (an invited paper for a feature article in a special issue), phys. stat. sol. (b) 244, 2740 - 2751 (2007).
58 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Excitation Dependent Photoluminescence Measurements of Nonradiative Lifetime and Quantum Efficiency in Bulk GaAs/AlGaAs, J. Vac. Sci. Technol. B, 25, 1077-1082 (2007).
57 C. Bückers, G. Blume, A. Thränhardt, C. Schlichenmaier, P. J. Klar, G. Weiser, S. W. Koch, J. Hader, J. V. Moloney, T. J. C. Hosea, S. J. Sweeney, J.-B. Wang, S. R. Johnson, and Y.-H. Zhang, Microscopic electroabsorption lineshape analysis for Ga(AsSb)/GaAs heterostructures, J. Appl. Phys. 101, 033118 (2007).
56 J.-B. Wang, and Y.-H. Zhang, Increased power conversion efficiency through photon recycling in quantum well lasers, phys. stat. sol. (c) 4, 1601– 1604 (2007).
55 D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, and Y.-H. Zhang, Intrinsic irreversibility in semiconductor light emission, phys. stat. sol. (c) 4, 1698– 1701 (2007).
54 V. I. Kadushkin, Yu. G. Sadof’ev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang, Resonance Modulation of the Intersubband Electron–Electron Interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) Quantum Well by Magnetic Field, Semiconductors 41, 327 (2007) [ Fizika i Tekhnika Poluprovodnikov 41, 338 (2007)].
53 K. Hild, S. J. Sweeney, I. P. Marko, S. R. Jin, S. R. Johnson, S. A. Chaparro, S. Yu, Y.-H. Zhang, Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers, phys. stat. sol. (b) 244, 197 (2007).
 
2006
52 K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, S. R. Johnson, S. A. Chaparro, S.-Q. Yu, Y.-H. Zhang, Carrier recombination in 1.3 µm GaAsSb/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).
51 L. Borkovska, O. Yefanov, O. Gudymenko, S. R. Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu. G. Sadofyev, Y.-H. Zhang, Effect of Growth Temperature on the Luminescent and Structural Properties of InGaAsSbN/GaAs Quantum Wells for 1.3 μm Telecom Applications, Thin Solid Films 515, 786 (2006).
50 N. A. Kabir, Y. Yoon, J. R. Knab, J.-Y. Chen, A. G. Markelz, J. L. Reno, Yu. G. Sadofyev, S. R. Johnson, Y.-H. Zhang, J. P. Bird, Terahertz Transmission Characteristics of High-Mobility GaAs and InAs Two-Dimensional-Electron-Gas Systems, Appl. Phys. Lett. 89, 132109 (2006).
49 K. Hild, S. Wright, D. Lock, S. Jin, I. Marko, S. Sweeney, S. R. Johnson, S. Chaparro, S.-Q. Yu, and Y.-H. Zhang, Carrier recombination in 1.3 µm GaAsSb/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).
48 J.-B.Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Influence of photon recycling on semiconductor luminescence refrigeration , J. Appl. Phys., 100, 043502 (2006) download
47 S.-Q. Yu, X. Jin, S. R. Johnson, Y.-H. Zhang, Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers, J. Vac. Sci. Technol. B 24, 1617 (2006) download
46 L. Borkovska, O. Yefanov, O. Gudymenko, S. Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu. Sadofyev, Y.-H. Zhang, Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 µm telecom application, Thin Solid Films 515, 786 – 789 (2006).
 
2005
45 Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Large Negative Persistent Photoconductivity in InAs/AlSb Quantum Wells, Appl. Phys. Lett. 86, 192109 (2005).
44 N. Samal, S. R. Johnson, D. Ding, A. K. Samal, Y.-H. Zhang, Novel VCSEL Design with Tailored Spatial Current Injection for High-Power Single-Mode Operation, Appl. Phys. Lett. 87, 161108 (2005).
43 G. Blume, T. J. C. Hosea, S. J. Sweeney, S. R. Johnson, J.-B. Wang, Y.-H. Zhang, Spectroscopic Investigations of GaAsSb/GaAs based structures for 1.3 µm VCSEL applications, IEE Proc. Optoelectron. 152, 110 (2005).
42 Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Infrared Light Induced Beating of Shubnikov-de Haas Oscillations in MBE grown InAs/AlSb Quantum Wells, J. Crystal Growth 278, 661 (2005).
41 Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Unusual Persistent Photoconductivity in InAs/AlSb Quantum Wells, Semiconductors 39, 95 (2005), [Fiz. Tekh. Poluprovodn. 39, 106 (2005)].
40 V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Cyclotrone Resonance in Both Doped and Non-Doped InAs/AlSb Quantum Well Heterostructures, Semiconductors 39, 61 (2005), [Fiz. Tekh. Poluprovodn. 39, 71 (2005)].
39 V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Maremiyanin, S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, Y.-H. Zhang, Persistent Photoconductivity Spectra in InAs/AlSb Quantum Well Heterostructures, Semiconductors 39, 22 (2005), [Fiz. Tekh. Poluprovodn. 39, 30 (2005)].
 
2004
38 S. R. Johnson, Yu. G. Sadofyev, D. Ding, Y. Cao, S. A. Chaparro, K. Franzreb, and Y.-H. Zhang, Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy, J. Vac. Sci. & Technol. 22, 1436 (2004).
37 D. S. Jiang, L. F. Bian, X. G. Liang, K. Chang, B. Q. Sun, S. Johnson, Y.-H. Zhang, Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells, J. Crystal Growth 268, 336 (2004).
36 Yu. G. Sadofyev, S. R. Johnson, S. A. Chaparro, Y. Cao, D. Ding, J.-B. Wang, K. Franzreb, and Y.-H. Zhang, “Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy”, Appl. Phys. Lett. 84, 3546 (2004).
35 J.-B. Wang, S. R. Johnson, S. A. Chaparro, D. Ding, Y. Cao, Yu. G. Sadofyev, Y.-H. Zhang, J.A. Gupta, and C.Z. Guo, Band edge alignment of pseudomorphic GaAs1-ySby on GaAs, Phys. Rev. B70, 195339 (2004).
 
2003 and earlier
34 J. Siegert, A. Gaarder, S. Marcinkevi ius, R. Leon, S. Chaparro, S. R. Johnson, Y. Sadofyev and Y. -H. Zhang, Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers, Physica E: Low-dimensional Systems and Nanostructures 18, 541 (2003).
33 J. Siegert, S. Marcinkevicius, A. Gaarder, R. Leon, S. Chaparro, S. R. Johnson, Y. Sadofyev, Y.-H. Zhang, Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers, Physica Status Solidi (c ) 0, 1213 (2003).
32 X.-H. Zheng, D.-J. Jiang, S. Johnson, Y.-H. Zhang, Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition, Appl. Phys. Lett. 83, 4149 (2003).
31 P. Dowd, S. R. Johnson, S. A. Feld, M. Adamcyk, S. A. Chaparro, J. Joseph, K. Hilgers, M. P. Horning, K. Shiralagi, Y.-H. Zhang, Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications, Electron. Lett. 39, 987 (2003).
30 S. R. Johnson, C.-Z. Guo, S. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, X. Jin, S.-Q. Yu, D. Ding, Y.-H. Zhang, GaAsSb/GaAs Band Alignment Evaluation for Long-Wave Photonic Applications, J. Crystal Growth 251, 521 (2003).
29 D. S. Jiang, J.-B. Wang, X.-G. Liang, Z.-B. Chen, S.-Q. Yu, Y. Cao, Y.-H. Zhang, Luminescence Properties of GaAsSb/GaAs Quantum Well Laser Structures, J. Infrared and Millimeter Waves 21, pp. 7-10 (2002).
28 R. G. Mani, W.B. Johnson, V. Narayanamurti, V. Privman, Y.-H. Zhang, Nuclear spin based memory and logic in quantum Hall semiconductor nanostructures for quantum computing applications, Physica E 12, 152 (2002).
27 Yu. G. Sadofyev, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, Y.-H. Zhang, Large g-Factor Enhancement in High-Mobility InAs/AlSb Quantum Wells, Appl. Phys. Lett. 81, 1833 (2002).
26 R. Leon, J. Ibanez, S. Marcinkevicius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, S. R. Johnson, Y.-H. Zhang, Defect States in Red-Emitting InxAl1-xAs Quantum Dots, Phys. Rev. B66, 85331 (2002).
25 R. Leon, S. Chaparro, S. R. Johnson, C. Navarro, X. Jin, Y.-H. Zhang, J. Siegert, S. Marcinkevicius, X. Z. Liao, J. Zou, Dislocation-Induced Spatial Ordering of InAs Quantum Dots: Effects on Optical Properties, J. Appl. Phys. 91, 5826 (2002).
24 M. Canonico, C. Poweleit, J. Menéndez, A. Debernardi, S. R. Johnson, Y.-H. Zhang, Anomalous LO Phonon Lifetime in AlAs, Phys. Rev. Lett. 88, 215502 (2002).
23 S. R. Johnson, S. Chaparro, J. Wang, N. Samal, Y. Cao, Z. B. Chen, C. Navarro, J. Xu, S. Q. Yu, David J. Smith, C.-Z. Guo, P. Dowd, W. Braun, and Y.-H. Zhang, GaAs-substrate-based long-wave active materials with type-II band alignments, J. Vac. Sci. & Technol. 19, 1501 (2001).
22 C.-Z. Guo, S.-L. Chen, Y.-H. Zhang, The limit of operation wavelength on IR intersubband quantum cascade lasers, J. of Infrared & Millimeter Waves 20, 1 (2001).
21 J. Ibáñez, R. Leon, D. T. Vu, S. Chaparro, S. R. Johnson, C. Navarro, and Y.-H. Zhang, Tunneling carrier escape from InAs self-assembled quantum dots, Appl. Phys. Lett. 79, 2013 (2001).
20 R. Leon, G. M. Swift, B. Magness, W.A. Taylor, Y.S. Tang, K.L. Wang, P. Dowd, and Y.-H. Zhang, Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots, Appl. Phys. Lett. 76, 2075 (2000).
19 W. Braun, P. Dowd, C.-Z. Guo, S. L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsasser, D. J. Smith, Strained InGaAs/GaPAsSb Heterostructures Grown on GaAs (001) for Optoelectronic Applications in the 1100 nm – 1550 nm Range, J. Appl. Phys. 88, 3004 (2000).
18 M. Beaudoin, E. Grassi, S.R. Johnson, K. Ramaswamy, K. Tsakalis, T.L. Alford, and Y.-H. Zhang, Real-Time Composition Control of InAlAs near lattice matched to InP Using Spectroscopic Ellipsometry, J. Vac. Sci. & Technol. 18, 1435 (2000).
17 S. R. Johnson, P. Dowd, W. Braun, U. Koelle, C. M. Ryu, M. Beaudoin, C. Z. Guo, Y.-H. Zhang, Long Wavelength Pseudomorphic InGaPAsSb Active Materials Grown on GaAs, J. Vac. Sci. & Technol. 18, 1545 (2000).
16 P. Dowd, W. Braun, David J. Smith, C.M. Ryu, C.-Z. Guo, S.L. Chen, U. Koelle, S.R. Johnson, and Y.-H. Zhang, Long Wavelength (1.3 µm and 1.5 µm) Photoluminescence from InGaAs/GaPAsSb Quantum Wells Grown on GaAs, Appl. Phys. Lett. 75(9), 1267 (1999).
15 W. Braun, H. Möller and Y.-H. Zhang, Accurate Growth Rate Determined on Rotating Substrates Using Electron Diffraction Dynamics, Appl. Phys. Lett., 74(1) 140 (1999).
14 W. Braun, H. Möller, S.R. Johnson, and Y.-H. Zhang, Reflection high-energy electron diffraction oscillations on rotating substrates, J. Vac. Sci. & Technol. 17, 474 (1999).
13 S. R. Johnson, E. Grassi, M. Beaudoin, M. D. Boonzaayer, K. S. Tsakalis, and Y.-H. Zhang, Closed-Loop Control of Composition and Temperature During the Growth of Lattice-Matched InGaAs on InP, J. Vac. Sci. Technol. B 17, 1237 (1999).
12 M. Beaudoin, S.R. Johnson, M.D. Boonzaayer, Y.-H. Zhang, and B. Joe, Use of Spectroscopic Ellipsometry for Feedback Control during the Growth of Thin AlAs and InAs layers, J. Vac. Sci. & Technol., B 17, 1233-6. (1999).
11 W. Braun, H. Möller, and Y.-H. Zhang, Azimuthal Scans: a New RHEED Measurement Mode During Growth on Rotating Substrates, J. Crystal Growth, 201/202, 50 (1999).
10 M. Beaudoin, P. Kelkar, S. R. Johnson, C.-H. Kuo, M. Boonzaayer, and Y.-H. Zhang, Growth of Resonant Cavity Enhanced Photo-Detectors (RCEPD) by MBE with Feedback Control Using Spectroscopic Ellipsometry, J. Crystal Growth, 201/202, 990 (1999).
9 S.R. Johnson, G. Grassi, M. Beaudoin, M. Boonzaayer, K.S. Tsakalis, Y.-H. Zhang, Feedback Control of Substrate Temperature During the Growth of Near-Lattice-Matched InGaAs and InAlAs on InP Using Diffuse Reflection Spectroscopy, J. Crystal Growth, 201/202, 44 (1999).
8 C.-H. Kuo, M. DeHerrera, T. Kyong, M. Boonzaayer, Y.-H. Zhang, B. Johs, and J.S. Hale, Real Time In-Situ Control of InGaAs Lattice Matched to InP by 88 Wavelength Ellipsometer, J. Vac. Sci. & Technol., B 16, 1484 (1998).
7 S.R. Johnson, C.-H. Kuo, M. Boonzaayer, W. Braun, U. Koelle, and Y.-H. Zhang, In-situ Temperature Control during MBE Growth Using band Edge Thermometry, J. Vac. Sci. & Technol., B 16, 1502 (1998).
6 W. Braun, H. Möller, and Y.-H. Zhang, Reflection High-Energy Electron Diffraction during Substrate Rotation: a New Dimension for in-situ Characterization, J. Vac. Sci. & Technol., B 16, 1507 (1998).
5 C.B. Wheeler and Y.-H. Zhang, III-V Oxides, and their Uses in Optoelectronic Integration, Compound Semicond. 3, 40 (1997).
4 Y.-H. Zhang, A. Y. Lew, E. T. Yu, and Y. Chen, Microstructure Properties of InAs/InAsxSb1-x Superlattices Grown by Molecular Beam Epitaxy, J. of Crystal Growth 175, 833 (1997).
3 K. Meimberg, M. Potemski, P. Hawrylak, Y.-H. Zhang, and K. Ploog, Optical Detected Oscillations of Screening by a Two-Dimensional Electron Gas in a Magnetic Field, Phys. Rev. B55, 7685 (1997).
2 H.Q. Le, G.W. Turner, J.R. Ochoa, M.J. Manfra, C.C. Cook, and Y.-H. Zhang, Broad Wavelength Tunability of Grating-Coupled External Cavity Midinfrared Semiconductor Lasers, Appl. Phys. Lett. 69, 2804 (1996).
1 A.Y. Lew, E.T. Yu, and Y.-H. Zhang, Atomic-Scale Structure of InAs/InAsxSb1-x Superlattices Grown and InAsxSb1-x Ordered Alloys Grown by Modulated Molecular Beam Epitaxy, J. of Vac. Sci. & Technol. B14, 2940 (1996).