2013

56 W. Yang, J.-J. Li, J. Becker, S. Liu, B. Landini, K. Campman, and Y.-H. Zhang, Ultra-Thin GaAs Single-Junction Solar Cells Integrated with a Reflective Back Scattering Layer, 2013 China Photovoltaic Technology International Conference, Shanghai, March 19-21, 2013.
55 Y.-H. Zhang, Ga-Free InAs/InAsSb type-II superlattice: its past, present and future, SPIE Photonics West, San Francisco, Feb. 2013.
 
2012
54 Y.-H. Zhang, Integration of Lattice-Matched 6.1Â II-VI/III-V Semiconductors for Optoelectronic Device Applications, The U.S. Workshop on the Physics and Chemistry of II-VI Materials, Seattle, November 27-29, 2012.
53 Y.-H. Zhang, IR Detectors Based on Ga-Free InAs/InAsSb type-II Superlattices and Two-Terminal Multi-Color FPAs, the 7th Annual IDGA’s Night Vision Systems, Arlington, Virginia July 23-25, 2012.
52 O.O. Cellek, H. Li, X.-M. Shen, Z. Lin, E.H. Steenbergen, S. Liu, H.S. Kim, J. Fan, P.T. Webster, L. Ouyang, Z.-Y. He, S.R. Johnson, D.J. Smith, and Y.-H. Zhang, Ga-free Type-II Superlattices and Optically-Addressed Multi-Color Photodetectors, The 2012 International Symposium on Optoelectronics Materials & Devices, Chicago, July 12-13, 2012.
51 O. O. Cellek, E. H. Steenbergen, H. Li, H. S. Kim, Z. Lin, and Y.-H. Zhang, MWIR and LWIR InAs/InAsSb Type-II Superlattices and optically-addressed multicolor photodetectors, SPIE Defense, Security, and Sensing, Baltimore, April 2012.
50 X. Liu, J, Furdyna, and Y.-H. Zhang, Integration of crystalline II-VI and III-V materials for solar cell application, 2012 Energy, Materials and Nanotechnology (EMN) Meeting, Orland, Florida, April 16-20, 2012.
49
L. Ouyang, E. Steenbergen, O. O. Cellek, Y.-H. Zhang, and D. J. Smith, Structural properties of InAs/InAs1-xSbx type-II superlattices, SPIE Photonics West, San Francisco, Jan. 2012.
 
2011
48 Y.-H. Zhang, 6.1 Å II-VI and III-V materials: A platform for photovoltaic and IR device applications, The 15th International Conference on II-VI Compounds, Mexico, Aug. 2011.
47 Y.-H. Zhang, 6.1 Å II-VI and III-V materials: A platform for photovoltaic and IR device applications, The 15th International Conference on II-VI Compounds, Mexico, Aug. 2011.
 

2010

46 N. Hossain, K. Hild, S. J. Sweeney, S.-Q. Yu, S. R. Johnson, D. Ding, and Y.-H. Zhang, Influence of Device Structures on Carrier Recombination in GaAsSb/GaAs QW Lasers, Photonics Global Conference, Singapore, Dec. 14-16, 2010.
45 Y.-H. Zhang, 6.1 Å II-VI and III-V materials: A platform for photovoltaic, thermophotovoltaic, and thermoelectric device applications, Advanced Concepts in Semiconductor Materials and Devices for Energy Conversion, Beltsville, Maryland, December 7-8, 2010.
44
Y.-H. Zhang, J. K. Furdyna, J.-J. Li, X. Liu, S. Wang, D. Ding, CdSe/CdTe type-II superlattices and II-VI/III-V heterostructures grown on GaSb substrates for optoelectronic devices, ICSNN-2010, Beijing, Jul 18-23, 2010.
43 Y.-H. Zhang, Monolithic integration of II-VI/III-V semiconductors on 6.1 A substrate for optoelectronic device applications, 2010 International Symposium on Optoelectronic Materials and Devices, Chicago, July 12-13, 2010.
42 Y.-H. Zhang, A Semi-analytical Model and Characterization Techniques for CPV Multi-junction Solar Cells, OSA SOLAR, Tuscon, Jun 7-9, 2010.
41 Y.-H. Zhang, J. Furdyna, X. Liu, and D. Ding, MBE growth of 6.1 Å II-VI and III-V semiconductors on GaSb substrates and their potential device applications, MBE Taiwan 2010 Conference, Taipei, May 24-25, 2010.
40 S.-N. Wu, S.-Q. Yu, S. R. Johnson, D. Ding, Y.-H. Zhang, Practical devices for semiconductor luminescent refrigeration, SPIE Photonics West, San Jose CA, January, 2010.
 

2009
39 Y.-H. Zhang, Novel multijunction solar cells, International Conference on Advance Materials, Rio de Janeiro, Brazil, 2009
38
Y.-H. Zhang, Latest progress in the study of electroluminescence refrigeration, SPIE Photonics West, San Jose CA, January 2009.

 
2008
37 Y.-H. Zhang, Electroluminescence Refrigeration and Ultrahigh Efficiency Solar Cells: Two Grand Challenges to p-n Junction Devices, Frontiers in Optics 2008/Laser Science (LS) XXIV Conference, Rochester, Oct. 2008.
36 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Measurement and Improvement of Quantum Efficiency in III-V Semiconductors, 50th TMS Electronic Materials Conference, EMC 2008, Santa Barbara CA, June 2008.
35 Y.-H. Zhang, S.-Q. Yu, D. Ding, S. R. Johnson, H.-X. Liu, S.-N. Wu, Electroluminescence Refrigeration in Semiconductor Light-Emitting Devices, SPIE Photonics West, San Jose CA, January 2008.
 
2007
34 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Theoretical Limits of Light Extraction and Its Impact on LED Wall-Plug Efficiency, SPIE Photonics Asia, Beijing, China, November 2007. 
33 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, A Fundamental Technique for the Measurement of Quantum Efficiency in Direct Bandgap Semiconductors, SPIE Photonics Asia, Beijing, China, November 2007. 
32 Y.-H. Zhang, S.Q. Yu, J.B. Wang, D. Ding, S. Johnson, Is a light emitting diode ever possible to become a cooler? ICMAT 2007, Singapore, July 2007.
31 Y.-H. Zhang, Electroluminescent Refrigerator: Would a Light Emitting Diode Ever Become a Cooler? Nano and Giga Challenges in Electronics and Photonics, Phoenix, Arizona, March 12-16, 2007.
30 Y.-H. Zhang, S.-Q. Yu, J.-B. Wang, D. Ding, S. R. Johnson, Latest progress in electroluminescence refrigeration in semiconductors, SPIE Photonics West, Jan. 2007.
 
2006
29 Y.-H. Zhang, J.B. Wang, D. Ding, S.Q. Yu, S. Johnson, The influence of photon recycling effect in light emitting devices, International Conference on LED and Solid State Lighting, Beijing, Dec. 2006.
28 Y.-H. Zhang, S.-Q. Yu, S. R. Johnson, J.-B. Wang, D. Ding, Latest Progresses in the Study of Electroluminescence Refrigeration, 5th Annual Workshop on Laser Cooling of Solids, Albuquerque NM, Oct. 2006.
27 Y.-H. Zhang, J.-B. Wang, D. Ding, S.-Q. Yu, S. R. Johnson, Theoretical Limits of Electro-luminescence Refrigeration in Semiconductors, SPIE Photonics West, San Jose CA, January 2006.
 
2005
26 Y.-H. Zhang, GaAsSb/GaAs 1.3 µm edge-emitting lasers and VCSELs grown on GaAs, Thirteenth International Workshop on The Physics of Semiconductor Devices, New Delhi, Dec. 2005.
25 Y.-H. Zhang, VCSELs on GaAs substrate, Summer School on Semiconductor Nanostructures and Optoelectronic Devices, International Institute of Advanced Studies, Beijing, China, August 2005.
24 Y.-H. Zhang, Midwave IR lasers, Summer School on Semiconductor Nanostructures and Optoelectronic Devices, International Institute of Advanced Studies, Beijing, China, August 2005.
23 Y.-H. Zhang, Selected current optoelectronics research topics, Summer School on Semiconductor Nanostructures and Optoelectronic Devices, International Institute of Advanced Studies, Beijing, China, August 2005.
22 S. R. Johnson, Y.-H. Zhang, MBE Growth of Compound Semiconductor Materials, Summer School on Semiconductor Nanostructures and Optoelectronic Devices, International Institute of Advanced Studies, Beijing, China, August 2005.
 
2004
21 Y.-H. Zhang, Antimony-based long-wavelength VCSELs, OSA Annual Meeting, Rochester, October 2004.
20 Y.-H. Zhang, Electrical Upconversion for Semiconductor Refrigeration, 3rd Annual Workshop on Laser Cooling of Solids, University of New Mexico, Albuquerque, April 2004.
 
2003 and earlier
19 J.-B. Wang, Y.-H. Zhang, Long Wavelength VCSELs and Other Research in MBE Optoelectronics Group, 2003 Symposium on Optoelectronics and Nano-electronics, Guangzhou, China, December, 2003.
18 M. Adamcyk, S. Chaparro, P. Dowd, S. Feld, K. Hilgers, M.P. Horning, S.R. Johnson, J. Joseph, B. Liang, K. Shiralagi, Y.-H. Zhang, 1.3 µm GaAsSb/GaAs VCSELs, SPIE ITCom, Orlando, September 2003.
17 M. Adamcyk, S. Chaparro, P. Dowd, S. Feld, K. Hilgers, S. R. Johnson, J. Joseph, B. Liang, K. Shiralagi, S.-Q. Yu, Y.-H. Zhang, 1.3 µm GaAsSb/GaAs VCSELs for Telecommunications Applications, SPIE Photonics West, San Jose CA, January 2003.
16 Y.-H. Zhang, S. R. Johnson, C.-Z. Guo, N. Samal, J.-B. Wang, S.-Q. Yu, Y. Cao, D. Ding, S. Chaparro, Y. Sadofyev, X. Jin, C. Navarro, D. Smith, “Room temperature CW operation of 1.3 µm strain-compensated GaAsP/GaAs/GaAsSb MQW VCSELs grown on GaAs”, APOC, Shanghai, Oct., 2002.
15 S. R. Johnson, Y.-H. Zhang, C.-Z. Guo, S. Chaparro, Yu. G. Sadofyev, Y. Cao, D. Ding, J.-B. Wang, N. Samal, P. Dowd, C. Navarro, J. Xu, S.-Q. Yu, D.J. Smith, GaAsP/GaAs/GaAsSb Long Wavelength VCSELs Grown by MBE, Fourteenth American Conference on Crystal Growth & Epitaxy (ACCGE-14), Seattle, August 2002.
14 S.R. Johnson, C.-Z. Guo, S. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, C. Navarro, J. Xu, P. Dowd, S.-Q. Yu, D. Ding, Y.-H. Zhang, CW Room Temperature Operation of Long-Wavelength GaAsSb VCSELs on GaAs, Long-Wave on GaAs Technology Workshop, Napa Valley, June 2002.
13 Y.-H. Zhang, International Workshop on Ultrafast Nonlinear Optics and Semiconductor Lasers, Cork, Ireland, September 5-8, 2001.
12 S.R. Johnson, M. Beaudoin, M. Boonzaayer, E. Grassi, Y.-H. Zhang, Real-time Control of Substrate Temperature Using Band Edge Thermometry, 2000 IEEE/LEOS Summer Topical Meetings, Florida, 24-28 July, 2000.
11 Y.-H. Zhang, U. Koelle, C.-M. Ryu, A. Srikanth, S. Johnson, and R. Turpin, Integration of large VCSEL/Photodetector Arrays with Si Chips, SPIE Photonics West, 2000.
10 Y.-H. Zhang, Long Wavelength VCSEL on GaAs using InAs/GaInAsSb Type-II QWs, The 10th International Workshop on Physics of Semiconductor Devices, Delhi, India.
9 C.-M. Ryu and Y.-H. Zhang, 1999 IEEE LEOS/CPMT Workshop on Fiber Optics, Optoelectronics, Photonics Assembly, Packaging, and Manufacturing, 9/99.
8 Y.-H. Zhang, S.R. Johnson, W. Braun, M. Beaudoin, In-situ Monitoring Techniques for MBE and Their Applications to the Growth of Devices, The Fifth International Conference on Advanced Materials (IUMRS-ICAM' 99), Beijing, China, 1999.
7 Y.-H. Zhang, Antimonide Containing Materials for Novel Optoelectronic Devices, The Fifth International Conference on Advanced Materials (IUMRS-ICAM' 99), Beijing, China, 1999.
6 Y.-H. Zhang, Integration of VCSELs with Si ICs for Free Space Optical Interconnects, LEOS 10th Annual Meeting, Nov. 1997, San Francisco.
5 Y.-H. Zhang, InAs/InAsSb Midwave Infrared Lasers-Their Modeling, Growth, and Characterization, International Workshop on Semiconductor Infrared Detectors and Emitters, July 23-25, 1997, Ottawa.
4 H.Q. Le, G.W. Turner, J.R. Ochoa, M.J. Manfra, C.C. Cook, Y.-H. Zhang, External Cavity Mid-Infrared Semiconductor Lasers, SPIE Photonics West, 1997.
3 Y.-H. Zhang, High-power InAs/InAsSb midwave infrared lasers, Presented at the SPIE Photonics China'96, Beijing, Nov. 1996.
2 E. Yu, A. Y. Lew, R. B. Welstand, C.H. Yan, J.T. Zhu, C.W. Tu, P.K.L. Yu, D.H. Chow, R.H. Miles, and Y.-H. Zhang, Cross-Sectional Scanning Tunneling Microscopy of Arsenide/Antimonide and Arsenide/Phosphide Semiconductor Heterostructures, 1996 Sprint MRS Meeting, San Francisco.

1 Y.-H. Zhang, H.Q. Le, D.H. Chow, R.H. Miles, T.C. Hasenberg, A.R. Kost, L.L. West, Mid Infrared lasers Grown on InAs Substrate, Diode Laser Technology Conference sponsored by USAF Phillips Lab, Fort Walton, Florida, April 1995.