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The
MBE laboratory is equipped with three solid source MBE chambers for
growing III-V semiconductor materials. All chambers are equipped for
reflection high energy electron diffraction (RHEED) characterization
and are fully computer controlled. |
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DCA MBE (Chamber C)
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Chamber
C is a DCA
Instruments 450 MBE machine equipped with ellipsometer ports and a wobble-free
substrate manipulator. It has been used to develop in-situ monitoring
tools which allow real-time feedback control of thickness and composition.
The system is also equipped with additional optical viewports used for
feedback control of substrate temperature by optical band edge thermometry. |
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VG V80H (Chamber A and B) |
The
other two chambers (A and B) are VG
V80H twin-chamber MBE systems. Both machines are dedicated to the growth
of GaAs, InP, GaSb, and InAs based optoelectronic devices (laser diodes,
light emitting diodes, optical refrigeration devices, photodetectors,
and photovaltic devices) for wavelengths ranging from 600 nm to 3 mircrons.
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Sources |
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| Chamber A: Ga, Al, In, As, Sb, N, Be, Si | |
| Chamber B: Ga, Al, In, As, Sb, P, Be, Si, Te, CBr4 | |
| NOTICE:
All equipment is available to external users at reasonable cost. Please contact us for further details. |
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