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Dr. Robin Scott

Arizona State University, Tempe, AZ

Email: rcscott@asu.edu

 

Summary of Qualifications

  • Technical expertise with hardware optimization and process development for thin film deposition techniques including CVD, MOCVD, and pulsed laser deposition (PLD)
  • Background in fabricating electronic and optoelectronic semiconductor devices using group IV (Si, SiGe, SiGeC), III-V (GaAs-based) and II-VI (ZnO, ZnTe) material systems
  • Experience using material and device characterization techniques including SRP, Hall Effect, SEM, EDS, surfscan, SIMS, TXRF, AFM, spectrophotometry and spectroscopic ellipsometry, PL, XRD, TLM, HP semiconductor parametric analyzer
  • Equally versed in both R&D and high volume manufacturing environments
Experience

L3 Communications - R&D Engineering, Materials and Device Sciences
(August 2015 - Present)

Develop next generation image intensification devices

Intel Corporation - Sr. Process Engineer
(August 2012 - August 2015)

Responsible for installation, qualification, production ramping and virtual factory matching of epitaxial growth reactors used for film deposition in S/D region of 14 nm transistors

Soitee USA - Sr. Epitaxy Scientist
(March 2011 - August 2012)

Developed epitaxial growth processes for next generation ultra-high efficiency solar cell structures to be used in concentrator photovoltaic systems:
  • Brought Aixtron G32600 epi reactor hardware on-line for the growth of ultra-high efficiency concentrator solar cells.  Obtained low oxygen AlGaAs layers (at SIMS background levels) immediately after tool start up - indicative of excellent leak integrity
  • Optimized growth recipes for multijunction solar cell structures including GaInAs, GaAlInAs, and GaInAsP lattice-matched to InP and GaInP lattice-matched to GaAs
Arizona State University - Research Associate
Electrical Engineering, MBE Optoelectronics Group
(January 2008 - March 2011)

Enrolled in PhD program to study physics of optoelectronic devices:
  • In collaboration with the Air Force Research Labs, developed pulsed laser deposited Ga-doped ZnO films to be used as anti-reflective transparent conductive oxide electrodes - achieved resistivity down to 1E-5 ohm-cm with transmittance > 90% over a broad spectral range
  • Involved with modifying MBE tool to provide dedicated III-V and II-VI chambers with internal "vacuum" wafer transfer capability for growth of multi-junction solar cells
  • Processed, fabricated and bench-tested single junction GaAs and heterojunction CdSe/ZnTe solar cells including tunnel junctions for inter-device ohmic contacts
  • Optimized metal contact oricesses for n,p-GaAs and p-ZnTe device structures using transmission line method (TLM) to obtain specific contact resistance on the order of E-6 ohm-cm^2 for highly doped films
  • Utilized selective etch techniques for substrate/layer removal of GaAs-based device structures
  • Studied thermo-compressive bonding of p-silicon to n-GaAs, including physical bond integrity and electrical junction characteristics
ASM America, Inc. - Sr. Process Engineer
(May 2002 - January 2008)

Development epitaxy engineer for Si-based CVD processes:
  • Optimized thermal uniformity of 300 mm Epsilon 3200 CVD reactor used for Si/SiGe structures in CMOS and DRAM device structures
  • Established process conditions for selective epitaxy
  • Developed a low pressure hydrogen bake that effectively desorbs oxygen from silicon surface at low temperatures
  • Worked with high volume semiconductor manufacturing companies to incorporate epitaxial structures into their 32 nm device designs
Medtronic - Sr. Device Engineer
(1999 - 2001)

Responsible for 1.5 Responsible um CMOS/BiCMOS yield improvement:
  • Reduced lateral and vertical short failures by recommending modified planarization scheme
  • Improved wafer yield on BiCMOS product line by eliminating defects associated with  photoresist mask leakage
  • Determined root cause failure mechanisms for wafers/lots failing Keithley parametric testing by analyzing product flow in fab, i.e., process commonalities, time stamps and failure analysis including SEM cross-sections and defect site specific probing
Lawrence Semiconductor Research Laboratories - Member Technical Staff
(1996 - 1999)

Leading edge research with group IV (Si, Ge, C) epitaxy using ASM Epsilon reactors:
  • Designed and implemented reactor hardware modifications to incorporate an organometallic precursor as p-type dopant in silicon epitaxial structures
  • Determined origin of defects for customers with stringent wafer defect specifications using strategic partitioning methods
  • Established production protocol to transition SOS (silicon on sapphire) technology from development to manufacturing
  • Worked with customers to develop epitaxial processes for Si/SiGe HBT structures
  • Using experimental design methods, customized a p-type epitaxial layer  to emulate an ion implanted dopant profile
Litton Industries, Electro-Optics Division - Process Engineer
(1980 - 1984) , (1989 - 1996)

Responsible for manufacturing the GaAs photocathode component used in image intensification devices:
  • Directly responsible for epitaxial growth of GaAs-based photocathode structures
  • Developed operational procedures/specifications for photocathode module
  • Implemented metrology for process control including photoluminescence, spectrophotometry, and electrochemical etch profiling
  • Engineering team leader in photocathode fabrication lab – team focused on yield enhancement, process streamlining, and improved quality of sputtered metallization and anti-reflection coatings, wet chemical and reactive ion etching processes
  • Implemented/maintained safety and environmental protocols including toxic gas detection and abatement systems
Epitronics Corporation - Member Technical Staff
(1984 - 1989)

Involved in all start-up activities for this III-V epitaxial wafer supplier:
  • Brought three MOCVD reactors on-line including hardware installation and process development
  • Worked with customers to developed epitaxial growth processes for GaAs-based heterostructures including solar cells, LEDs, lasers, MESFETs, HEMTs and HBTs
  • Established electrochemical etch profiling and Hall Effect procedures to characterize the  electrical properties of epitaxial layers
Education

B.S. Chemistry, Arizona State University, 1980
M.S.E Materials Science and Engineering, Arizona State University, 2002
Ph.D. Materials Science and Engineering, Arizona State University, 2011

Patent

Low Pressure / Low Temperature Wafer bake for oxide desorption from Silicon:
Process and apparatus for treating wafers, 2008 ASM EX.604

Publications

  1. R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D.C. Look, Y.-H. Zhang, “Effects of Ar vs. O2 Ambient on Pulsed-Laser-Deposited Ga-doped ZnO”,  J. Cryst. Growth, 324,110 (2011).
  2. R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, D. J. Smith, D. Ding, X. Lu, Y.-H. Zhang, “Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition”, J. Electron. Mater. 40, 419 (2011).
  3. R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D.C. Look, Y.-H. Zhang, “Highly conductive ZnO grown by pulsed laser deposition in pure Ar”, Appl. Phys. Lett. 97 072113 (2010).
  4. S. Wang, D. Ding, R. Scott, J. Chen, M. DiNezza, X. Liu, J. Furdyna, and Y.-H. Zhang, “CdSe/ZnTe heterojunction solar cells grown on GaSb”, PVSC, 34th IEEE, 001654 (2009).
  5. P. Brabant, J. Ferrara, B. Pagliaro, K. Week, M. Rittgers, R. Scott, Y. Zhang, T. Landin, “Hydrogen termination for extended queue times for low temperature epitaxy”, Appl. Surf. Sci. 255, 1741 (2008).
Conference Presentation and Proceedings
  1. B. Bayraktaroglu, K. Leedy, R. Scott, Indium-free Transparent Thin Film Transistors Based on
    Nanocrystalline ZnO, abstracted submitted to 69th Device Research Conference, U.C. Santa Barbara, June 20-22, 2011.
  2. K. Leedy, B. Bayraktaroglu, R. Scott and D. Look, Nanocrystalline ZnO thin film transistors for multiple applications, abstract submitted International Conference on Materials for Advanced Technologies, Singapore, June 26, 2011.
  3. D. C. Look,   R. C. Scott, K. D. Leedy, B. Bayraktaroglu, Donor and acceptor concentrations from a single mobility measurement in degenerate semiconductors: ZnO, SPIE Photonics West, San Francisco, California, January 22-27, 2011.
  4. R. Scott, K. Leedy, B. Bayraktaroglu, D. Look, D. Ding, X. Lu, D. Smith, and Y.-H. Zhang, Influence of substrate temperature and post-deposition anneal on material properties of Ga-doped ZnO prepared by pulsed laser deposition, Electronic Materials Conference, Notre Dame, June 23-25, 2010.
  5. R. Scott, K. Leedy, B. Bayraktaroglu, D. Look, D. Ding, X. Lu, D. Smith, and Y.-H. Zhang, Pulsed Laser Deposition of conductive ZnO for TCO electrodes, Lawrence Symposium on Epitaxy 2010, Scottsdale, Arizona, February 24-26, 2010.
  6. S. Wang, D. Ding, R. Scott, J. Chen, M. DiNezza, X. Liu, J. Furdyna, and Y.-H. Zhang, CdSe/ZnTe heterojunction solar cells grown on GaSb, PVSC, 34th IEEE, 001654 (2009).