Peng Wang

ERC 163, Arizona State University, Tempe, AZ

Tel: 480-703-2935


  • Ph.D in Microelectronics and Solid State Electronics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai, China
  • M.S. in Condensed Matter Physics, School of  Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen, China
Research Experience
Shanghai Institute of  Microsystem and Information Technology
  1. Material growth of InAs/InGaAs DWELL laser on Ge substrate using gas-source MBE
  • Successful fabrication of RT CW InAs QD laser on Ge substrate
  • Detailed studeis InAs QD compressive strain reduction by InGaAs matrix
  • Optical and structural studeis of InAs/GaAsBi DWELL structure
  • Successful growth of GaAsBi on tilted Ge (100) substrate
  1. InGaAsSb/AlGaAsSb QW laser grown by solid-souce MBE
  • Successful fabrication of RT CW InGaAsSb/AlGaAsSb QW 2.0~2.7um laser on GaSb
  • Realization of up to 3.6um RT PL emission from InGaAsSb QW
  • Optimization of InAlGaAsSb barrier material growth

  1. Dilute bismuth phosphide including InPBi, InGaPBi, and InAlPBi grown by gas-souce MBE
  • First growth of lattice matching InGaPBi, InAlPBi on InP and GaAs substrates
  • Investigation to influence of Si doping on optical properties of InPBi

  1. Other materials and structures
  • GaAs/AlGaAs 2DEG structure for MBE equipment condition evaluation
  • InAs QDs on InGaAsP/InP DBR structure for single-photon sources